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PD - 94445
SMPS MOSFET
Applications l High frequency DC-DC converters
IRFL4315
HEXFET(R) Power MOSFET RDS(on) max ID 185m@VGS = 10V 2.6A
VDSS
150V
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
2.6 2.1 21 2.8 0.02 30 6.3 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Typ.
---
Max.
45
Units
C/W
Notes through are on page 8
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06/14/02
IRFL4315
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.19 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 185 m VGS = 10V, ID = 1.6A 5.0 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 12 2.1 6.8 8.4 21 20 19 420 100 25 720 48 98 Max. Units Conditions --- S VDS = 50V, ID = 1.6A 19 ID = 1.6A 3.1 nC VDS = 120V 10 VGS = 10V --- VDD = 75V --- ID = 1.6A ns --- RG = 15 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
38 3.1
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 61 160 2.6 A 21 1.5 91 240 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.1A, VGS = 0V TJ = 25C, IF = 1.6A di/dt = 100A/s
D
S
2
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IRFL4315
100
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
100
ID , Drain-to-Source Current (A)
10
ID , Drain-to-Source Current (A)
10
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
1
5.5V
5.5V
1
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
2.5
I D = 2.6A
ID , Drain-to-Source Current ( )
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
10.00
T J = 150C
1.0
T J = 25C VDS = 50V 20s PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
0.5
1.00
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFL4315
10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd
12
VGS, Gate-to-Source Voltage (V)
ID= 1.6A VDS= 120V VDS= 75V VDS= 30V
10 8 6 4 2
C, Capacitance(pF)
1000
C iss
100
C oss
C rss
10 1 10 100 1000
FOR TEST CIRCUIT SEE FIGURE 13
0 0 2 4 6 8 10 12 14
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS (on)
TJ = 150 C
ID, Drain-to-Source Current (A)
I SD, Reverse Drain Current (A)
10
10
T J= 25 C
1
100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) 10msec
0.1 0.0 0.5 1.0 1.5
V GS = 0 V
2.0 2.5
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFL4315
3.0
VDS
2.5
RD
VGS RG
D.U.T.
+
2.0
ID , Drain Current (A)
-VDD
1.5
10V
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS 90%
0.0 25 50 75 100 125 150
TA , Ambient Temperature (C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50
10
0.20 0.10
Thermal Response
0.05
1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1
Notes: 1. Duty factor D = 2. Peak T
J
P DM t1 t2 +TA 10 100
t1 / t 2
= P DM x Z thJA
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFL4315
R DS (on) , Drain-to-Source On Resistance (m )
240 220 200 180 160 140 120 100 0 5 10 15 20 25 ID , Drain Current (A) VGS = 10V
R DS(on) , Drain-to -Source On Resistance (m )
4000 3500 3000 2500 2000 1500 1000
ID = 2.6A
500 0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
100
VGS
3mA
Charge
IG ID
Current Sampling Resistors
80
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
EAS , Single Pulse Avalanche Energy (mJ)
TOP ID 1.4A 2.5A 3.1A BOTTOM
60
40
15 V
V (B R )D S S tp VD S L DRIVE R
20
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
A
0 25 50 75 100 125 150
Starting Tj, Junction Temperature
( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRFL4315
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R W W = W E EK P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4
TOP
B O TT O M
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IRFL4315
Tape & Reel Information
SOT-223 Outline
TR 2 .0 5 (.0 80 ) 1 .9 5 (.0 77 ) 4 .1 0 (.1 61) 3 .9 0 (.1 54) 1 .85 (.07 2 ) 1 .65 (.06 5 ) 0 .35 (.0 1 3) 0 .25 (.0 1 0)
7.5 5 (.2 9 7) 7.4 5 (.2 9 4)
7 .6 0 (.2 99 ) 7 .4 0 (.2 92 ) 1 .6 0 (.0 62) 1 .5 0 (.0 59) TY P . F E E D D IR EC T IO N 12 .10 (.47 5) 11 .90 (.46 9) 7 .1 0 (.2 79 ) 6 .9 0 (.2 72 )
1 6 .3 0 (.6 4 1) 1 5 .7 0 (.6 1 9)
2.30 (.0 90 ) 2.10 (.0 83 )
N OTES : 1 . C O N T R O L L ING D IM E N S IO N : M IL LIM E TE R . 2 . O U T LIN E C O N F O R M S T O E IA -48 1 & E IA -54 1. 3 . E A C H O 3 30.0 0 (13 .00 ) R E E L C O N T A IN S 2,5 00 D E V IC E S .
1 3 .20 (.51 9 ) 1 2 .80 (.50 4 ) 1 5.40 (.6 07) 1 1.90 (.4 69) 4
330.00 (13.000) M AX.
50.0 0 (1 .9 6 9) M IN .
N O TE S : 1 . O U T L IN E C O M F O R M S T O E IA -4 18 -1 . 2 . C O N T R O LL IN G D IM EN S IO N : M IL L IM E T E R .. 3 . D IM EN S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R ED G E .
18 .40 ( .72 4) MAX. 1 4.4 0 (.5 6 6) 1 2.4 0 (.4 8 8)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Starting TJ = 25C, L = 7.8mH
RG = 25, IAS = 3.1A.
Pulse width 400s; duty cycle 2%.
ISD 1.6A, di/dt 230A/s, VDD V(BR)DSS,
TJ 150C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/02
8
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